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Can be used for preparation of niobium disulfide nanoplates and ultrathin films
9 lm W−1 Device structure ITO/NPD* (40 nm)/9%-Ir(piq)3:CBP (20 nm)/BPhen (50 nm)/KF (1 nm)/Al [11] Color Red Max
5-trifluoroaniline displays the maximum luminance of 1
Synonyms 2
Self-Assembled Interlayer Enables High-Performance Organic Photovoltaics with Power Conversion Efficiency Exceeding 20%
Gallium Sulfide (GaS) Powder and Crystals electron interface Can be used for preparationLow price, high purity gallium sulfide powder and crystals Suitable for use a semiconductor, photodetectors, and in UV light emitting diodes Technical Data MSDS Structure Literature and Reviews Related Products Resources and Support Gallium sulfide (GaS), CAS number 12024 10 1, is a layered semiconductor and it belongs to group XIII post transitional mono chalcogenide. In gallium sulfide each individual layer consists of covalently bonded SGaGaS
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