Hypertec 4GB PC3-8500 (Legacy) memory module 1 x 4 GB DDR3 1066 MHz DDR4 5 V Design Product colour

5 V Design Product colour Blue Cooling type Heatsink Technical details Product colour Blue Cooling type Heatsink Memory Buffered memory type Registered (buffered) Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Component for PC/server Memory form factor 240-pin DIMM Memory voltage 1

2 V Cooling type Heatsink Memory ranking 4 ECC Yes Memory clock speed 2666 MHz Internal memory type DDR4 Weight & dimensions Package width 10 mm Package depth 150 mm Package height 55 mm Package weight 30 g Packaging data Package width 10 mm Package depth 150 mm Package height 55 mm Package weight 30 g

Memory Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3

Memory Buffered memory type Registered (buffered) Internal memory 8 GB Memory form factor 240-pin DIMM Memory ranking 1 ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3 Features Buffered memory type Registered (buffered) Internal memory 8 GB Memory form factor 240-pin DIMM Memory ranking 1 ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3

A Lenovo equivalent 4 GB Low Voltage - unbuffered Non-ECC DDR3L SDRAM - SO-DIMM 204-pin 1600 Mhz Legacy ( PC3L-12800 ) from Hypertec

Hypertec 4GB PC3-8500 (Legacy) memory module 1 x 4 GB DDR3 1066 MHz DDR4 5 V Design Product colourA Hypertec Legacy Memory Module is a module that uses no current DRAM technology and is no longer in mainstream production by OEMS and or third party suppliers. Hypertec are committed to providing a full memory upgrade landscape as part of our core product offering and as such, there may be occasions where we need to utilise professionally repurposed components. Any repurposed components are removed within a full ESD environment and then used to