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Low VCE(sat) minimizes conduction losses and reduces heatsink size requirements in thermally constrained enclosures
Isolated baseplate construction for direct heatsink mounting
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and three-phase PWM converters
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FZ1200R33KF2C-INFINEON Quantity Percent Discount Low VCE(sat) minimizes conduction lossesThe Infineon FZ1200R33KF2C is an ultra high power IGBT module engineered for the most demanding power conversion environments. Rated at 1200 amperes and 3300 volts, this single switch IGBT module leverages Infineon's advanced IGBT4 technology to deliver low saturation voltage, fast switching characteristics, and outstanding ruggedness. The module's robust construction and integrated freewheeling diode make it a go to solution for engineers designing
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