6MBI50L-120-FUJI Intelligent Power Module Matched diode characteristics within the

Matched diode characteristics within the module support balanced current sharing across all six diodes during three-phase rectification

Part Number MG100H2CL1 Manufacturer Toshiba Type IGBT Power Module Current Rating 100A Voltage Rating 600V Availability In Stock — Same-Day Shipping Condition New OEM Key Features of the MG100H2CL1:

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robust 1200V voltage class

6MBI50L-120-FUJI Intelligent Power Module Matched diode characteristics within theThe Fuji 6MBI50L 120 is a 1200V, 50A six pack IGBT module integrating six isolated gate bipolar transistors in a full three phase bridge configuration within a single package. Designed for high frequency switching in demanding power conversion environments, this module features low saturation voltage (VCE(sat)), fast switching characteristics, and integrated freewheeling diodes, making it well suited for compact, thermally efficient inverter designs.