BSM100GB120DN2-E3256-INFINEON Palmetto Inventory this module represents the quality

this module represents the quality and precision engineering that maintenance engineers and OEM designers depend on when system uptime is non-negotiable and component reliability is paramount

30A IGBT power semiconductor module engineered for high-efficiency switching in industrial power conversion systems

Suitable for both single-phase and three-phase controlled rectifier topologies

Sourcing IGBT modules like the MG25J6ES40 can be challenging due to long manufacturer lead times

Part Number FS300R17KE3 Manufacturer Infineon Technologies Type IGBT Module (Six-Pack) Collector Current (IC) 300A Collector-Emitter Voltage (VCES) 1700V Availability In Stock — Same-Day Shipping Condition New OEM Key Features of the FS300R17KE3:

BSM100GB120DN2-E3256-INFINEON Palmetto Inventory this module represents the qualityThe BSM100GB120DN2 E3256 is a high performance dual IGBT module manufactured by Infineon Technologies, offering a 100A collector current rating and 1200V blocking voltage. Utilizing Infineon's advanced trench gate IGBT technology within the DN2 package configuration, this module provides low saturation voltage, fast switching characteristics, and integrated freewheeling diodes making it an excellent choice for engineers designing robust power