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legacy rectifier systems
Designed for compatibility with standard IGBT gate driver ICs operating at ±15V gate drive voltage
Its combination of high current capability and 1200V voltage rating makes it especially well-suited for medium-voltage drive platforms and grid-tied inverter stages where thermal performance and switching efficiency are critical
and welding inverters
and general-purpose industrial power converters
FS225R12KE3_S1-INFINEON Desc legacy rectifier systemsThe Infineon FS225R12KE3_S1 is a high performance 1200V 225A IGBT module engineered for industrial power conversion applications requiring robust switching capability and thermal efficiency. Utilizing Infineon's proven trench and fieldstop IGBT chip technology, this module offers low saturation voltage, low switching losses, and excellent short circuit ruggedness. Its six pack configuration makes it ideal for three phase inverter topologies in a
