400 nm to 1000 nm Si PIN Photodiode, 100 MHz C-band Raman Amplifier 2-S is fabricated with Annealed

2-S is fabricated with Annealed Proton Exchange (APE) optical waveguides

Lead Time: 4-5 Weeks

5 dB noise figure and is designed to amplify signal with a low input level as low as -50 dBm

analog RFoF transmission to 40 GHz

The device is C+L-band

400 nm to 1000 nm Si PIN Photodiode, 100 MHz C-band Raman Amplifier 2-S is fabricated with AnnealedThe module provides low insertion loss, high channel isolation, wide pass band, low temperature sensitivity and epoxy free optical path. It can be used in DWDM network, fiber optical amplifier and HFC fiberoptic system. FEATURES High Responsivity, High Speed Low Dark Current,  Low Capacitance  Planar Incident Structure Coaxial Package, Laser Welding Detect Range 400 nm to 1000 nm RoHS Compliant and Lead free USE IN Optical Power Meter